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D5V0L1B2LP4
Maximum Ratings @T A = 25°C unless otherwise specified
Characteristic
Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Symbol
P PP
I PP
V ESD_Contact
V ESD_Air
Value
84
6
±30
±30
Unit
W
A
kV
kV
Conditions
8/20 μ s, Per Fig. 1
8/20 μ s, Per Fig. 1
IEC 61000-4-2 Standard
IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
250
500
-65 to +150
Unit
mW
° C/W
° C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Reverse Standoff Voltage
Channel Leakage Current (Note 5)
Symbol
V RWM
I RM
Min
-
-
Typ
-
10
Max
5
100
Unit
V
nA
Test Conditions
-
V RWM = 5V
-
7.0
9.0
I PP = 1A, t p = 8/20 μ S
Clamping Voltage, Positive Transients
V CL
-
-
9.0
10.5
11.0
12.0
V
I PP = 3.5A, t p = 8/20 μ S
I PP = 5A, t p = 8/20 μ S
-
11.5
14.0
I PP = 6A, t p = 8/20 μ S
Breakdown Voltage
Differential Resistance
Channel Input Capacitance
V BR
R DIF
C T
6
-
-
7
0.2
15
8
-
20
V
?
pF
I R = 1mA
I R = 1A, t p = 8/20 μ S
V R = 0V, f = 1MHz
Notes:
4. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
18
100
17
16
15
14
f = 1 MHz
50
13
12
11
0
0
20
40
60
10
0
1
2 3 4 5 6
t, TIME ( μ s)
Fig. 1 Pulse Waveform
V R , REVERSE VOLTAGE (V)
Fig. 2 Typical Total Capacitance vs. Reverse Voltage
D5V0L1B2LP4
Document number: DS35586 Rev. 4 - 2
2 of 4
www.diodes.com
January 2012
? Diodes Incorporated
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