收藏本站
D5V0L1B2LP4
Maximum Ratings @T A = 25°C unless otherwise specified
Characteristic
Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Symbol
P PP
I PP
V ESD_Contact
V ESD_Air
Value
84
6
±30
±30
Unit
W
A
kV
kV
Conditions
8/20 μ s, Per Fig. 1
8/20 μ s, Per Fig. 1
IEC 61000-4-2 Standard
IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
250
500
-65 to +150
Unit
mW
° C/W
° C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Reverse Standoff Voltage
Channel Leakage Current (Note 5)
Symbol
V RWM
I RM
Min
-
-
Typ
-
10
Max
5
100
Unit
V
nA
Test Conditions
-
V RWM = 5V
-
7.0
9.0
I PP = 1A, t p = 8/20 μ S
Clamping Voltage, Positive Transients
V CL
-
-
9.0
10.5
11.0
12.0
V
I PP = 3.5A, t p = 8/20 μ S
I PP = 5A, t p = 8/20 μ S
-
11.5
14.0
I PP = 6A, t p = 8/20 μ S
Breakdown Voltage
Differential Resistance
Channel Input Capacitance
V BR
R DIF
C T
6
-
-
7
0.2
15
8
-
20
V
?
pF
I R = 1mA
I R = 1A, t p = 8/20 μ S
V R = 0V, f = 1MHz
Notes:
4. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
18
100
17
16
15
14
f = 1 MHz
50
13
12
11
0
0
20
40
60
10
0
1
2 3 4 5 6
t, TIME ( μ s)
Fig. 1 Pulse Waveform
V R , REVERSE VOLTAGE (V)
Fig. 2 Typical Total Capacitance vs. Reverse Voltage
D5V0L1B2LP4
Document number: DS35586 Rev. 4 - 2
2 of 4
www.diodes.com
January 2012
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
D5V0L1B2T-7 TVS DIODE 5V 1CH BI SOD523
D5V0L1B2WS-7 TVS DIODE 5V 1CH BI SOD323
D5V0L2B3SO-7 TVS DIODE 5V 2CH BI SOT23
D5V0L2B3T-7 TVS DIODE 5V 2CH BI SOT523
D5V0L2B3W-7 TVS DIODE 5V 2CH BI SOT323
D5V0L4B5S-7 TVS DIODE 5V 4CH BI SOT353
D5V0L4B5SO-7 TVS DIODE 5V 4CH BI SOT25
D5V0L4B5TS-7 TVS DIODE 5V 4CH BI TSOT25
相关代理商/技术参数
D5V0L1B2LP-7B 功能描述:TVS 二极管 - 瞬态电压抑制器 1 CH TVS BI Array 5.0 Volts 84W 6A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
D5V0L1B2T-7 功能描述:TVS 二极管 - 瞬态电压抑制器 BI 10.1 to 20pF 1Ch 2 Pin SOD523 TVS RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
D5V0L1B2TS7 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
D5V0L1B2TS7B 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
D5V0L1B2WS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
D5V0L1B2WS-7 功能描述:TVS 二极管 - 瞬态电压抑制器 BI 10.1 to 20pF 1Ch 2 Pin SOD123 TVS RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
D5V0L1B5LP37 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
D5V0L1B5LP37B 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:LOW CAPACITANCE BIDIRECTIONAL TVS DIODE